Date Posted:

　　2024-01-23

　　Country:

　　United States of America

　　Location:

　　MA112: Andover MA 358 Lowell St Dukes 358 Lowell Street Dukes, Andover, MA, 01810 USA

　　Position Role Type:

　　Onsite

　　About Us:

　　At Raytheon Missiles & Defense, you have the opportunity to try new things and make a bigger difference across a broader end-to-end solution, a richer technology and product set, an expanded range of disciplines, a growing global footprint and a more diverse team of colleagues and customers.

　　Job Summary:

　　As a member of the AMS Department, the individual in this role will work closely with the staff at Raytheon’s RF Components III-V device foundry to develop new microwave and millimeter device technology. In this position the chosen candidate will be responsible for the development and optimization of new III-V Molecular Beam Epitaxial (MBE) growth processes, exploration of novel material structures for next generation devices, and maintaining / improving epitaxial growth systems. The candidate is expected to operate and help maintain the R&D MBE systems in the foundry’s cleanroom environment. The chosen candidate will also be expected to perform basic materials characterization and interpret results for techniques including XRD, Hall, SIMS, CV/IV, AFM, and SEM. The chosen candidate is expected to be innovative, a creative thinker and problem solver, able to perform and support growth development, assist in pursuing contract R&D, and assist in transitioning material structures into production.

　　Solid state physics and/or device physics experience is desired as the ideal candidate will also assist in improving the foundry’s various III-V device fabrication process flows especially as they relate to incorporating new epitaxial materials. The candidate is expected to work well in small, cross-functional teams, collaborate across the company and with various external collaborators and funding agencies and have strong communication skills. The role requires a large degree of multitasking with attention to detail while managing priorities depending on the nature of the problems and the commitments to customers or program leads.

　　Responsibilities to Anticipate:

　　Development/optimization of MBE epitaxial growth processes and layer structures (including but not limited to III-V and III-N materials)

　　Exploration of novel material structures for next generation devices and pursuit of contract R&D opportunities

　　Maintaining and improving epitaxial growth and characterization equipment

　　Coordinating in-house material R&D activities, presenting to internal and external customers, and assisting with program capture activities

　　Basic Qualifications:

　　Typically a Bachelor’s in Science, Technology, Engineering, or Mathematics (STEM) and 5 years of prior relevant experience OR a Master’s in STEM and 3 years of prior relevant work experience OR a PhD in STEM.

　　Experience in materials/epitaxial growth

　　Experience in maintaining and utilizing MBE growth systems

　　The ability to obtain and maintain a US security clearance. U.S. citizenship is required as only U.S. citizens are eligible for a security clearance

　　Preferred Qualifications:

　　A Master’s or PhD in STEM.

　　III-V material and device experience including III-N’s

　　Experience with troubleshooting, improving, and modifying laboratory equipment, including MBE and ultra-high vacuum (UHV) equipment

　　Experience with in-situ growth monitoring and diagnostic techniques

　　Experience working on proposals for contract research funding, e.g. DARPA

　　Experience with IP generation and patents

　　Experience with electrical devices and/or device physics

　　Collaborate with subject matter experts both within and outside of Raytheon to continue to improve and develop our products

　　Semiconductor device processing and cleanroom experience

　　The salary range for this role is 77,000 USD - 163,000 USD. The salary range provided is a good faith estimate representative of all experience levels. RTX considers several factors when extending an offer, including but not limited to, the role, function and associated responsibilities, a candidate’s work experience, location, education/training, and key skills.

　　Hired applicants may be eligible for benefits, including but not limited to, medical, dental, vision, life insurance, short-term disability, long-term disability, 401(k) match, flexible spending accounts, flexible work schedules, employee assistance program, Employee Scholar Program, parental leave, paid time off, and holidays. Specific benefits are dependent upon the specific business unit as well as whether or not the position is covered by a collective-bargaining agreement.

　　Hired applicants may be eligible for annual short-term and/or long-term incentive compensation programs depending on the level of the position and whether or not it is covered by a collective-bargaining agreement. Payments under these annual programs are not guaranteed and are dependent upon a variety of factors including, but not limited to, individual performance, business unit performance, and/or the company’s performance.

　　This role is a U.S.-based role. If the successful candidate resides in a U.S. territory, the appropriate pay structure and benefits will apply.

　　RTX anticipates the application window closing approximately 40 days from the date the notice was posted. However, factors such as candidate flow and business necessity may require RTX to shorten or extend the application window.

　　RTX is An Equal Opportunity/Affirmative Action Employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, disability or veteran status, age or any other federally protected class.

　　Privacy Policy and Terms:

　　Click on this link (http://www.rtx.com/privacy/Job-Applicant-Privacy-Notice) to read the Policy and Terms

　　Raytheon Technologies is An Equal Opportunity/Affirmative Action Employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, disability or veteran status, age or any other federally protected class.